unisonic technologies co., ltd uf601 power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-699.c 0.185a, 600v n-channel depletion-mode power mosfet ? description the utc uf601 is an n-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed. ? features * r ds(on) =700 ? @ v gs =0v,i d =3ma * high switching speed ? symbol sot-23 (sc-59) 1 2 3 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 uf601l-ae3-r UF601G-AE3-R sot-23 s g d tape reel note: pin assignment: g: gate d: drain s: source
uf601 power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-699.c ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage (note 2) v dss 600 v drain-gate voltage (note 2) v dgx 600 v gate-source voltage v gss 20 v drain current continuous i d 0.185 a pulsed i dm 0.740 a power dissipation p d 0.50 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. t j =+25c~+150c ? thermal data parameter symbol ratings unit junction to ambient ja 250 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =-5v 600 v drain-source leakage current i d ( off ) v ds =600v, v gs =-5v 0.1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =3v, i d =8a -2.7 -1.5 v drain-source leakage current i dss v ds =25v, v gs =0v 7.0 ma static drain-source on-state resistance r ds ( on ) v gs =0v, i d =3ma 600 700 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 9.44 pf output capacitance c oss 2.28 pf reverse transfer capacitance c rss 1.42 pf switching parameters total gate charge q g v gs =-5~5v, v ds =30v, i d =5ma 1.29 nc gate to source charge q gs 0.1 nc gate to drain charge q gd 0.47 nc turn-on delay time t d ( on ) v gs =-5~5v, v dd =30v, i d =5ma, r g =20 ? 4 ns rise time t r 9 ns turn-off delay time t d ( off ) 14 ns fall-time t f 84 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i sd =3.0ma, v gs =-10v 1.4 v notes: 1. repetitive rating, pulse width li mited by maximum junction temperature. 2. pulse width 380 s; duty cycle 2%.
uf601 power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-699.c ? typical characteristics time (40ns/div) 0 200 400 v dd =30v ,i d =5ma, r g =20 ? 0 10v /5v time (200ns/div) 010002000 v dd =30v ,i d =5ma, r g =20 ? -10v /-5v 0 10v /5v -10v /-5v tr tf utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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